Journal: Materials

Article Title: Surface Morphology Evolution during Chemical Mechanical Polishing Based on Microscale Material Removal Modeling for Monocrystalline Silicon

doi: 10.3390/ma15165641

Figure Lengend Snippet: Surface area–volume model simulation of two neighboring parabolic cracks (thick line) and Gaussian fitting results (thin line) in 2D. The etching rate for bulk silica material was 1.74 μm/h , and the etching time was 1–5 h.

Article Snippet: The MATLAB ‘fspecial’ and ‘imfilter’ command predefined a rotationally symmetric Gaussian image filter, in which the Gaussian function in 2D satisfies (16) y = a · e x p [ − x − b c 2 ] .

Techniques:

Journal: Materials

Article Title: Surface Morphology Evolution during Chemical Mechanical Polishing Based on Microscale Material Removal Modeling for Monocrystalline Silicon

doi: 10.3390/ma15165641

Figure Lengend Snippet: RMS roughness evolution for 17,550 loops with Gaussian blur over the entire surface. The curve is nonconvergent for one abrasive per loop with quasilinear growth after 4000 loops.

Article Snippet: The MATLAB ‘fspecial’ and ‘imfilter’ command predefined a rotationally symmetric Gaussian image filter, in which the Gaussian function in 2D satisfies (16) y = a · e x p [ − x − b c 2 ] .

Techniques:

Journal: Materials

Article Title: Surface Morphology Evolution during Chemical Mechanical Polishing Based on Microscale Material Removal Modeling for Monocrystalline Silicon

doi: 10.3390/ma15165641

Figure Lengend Snippet: SiO 2 ASD test by DLS, with a Gaussian-type fitting mode (red solid line); peaks at 2.8 and 107.2 nm for the bimodal ASD curve.

Article Snippet: The MATLAB ‘fspecial’ and ‘imfilter’ command predefined a rotationally symmetric Gaussian image filter, in which the Gaussian function in 2D satisfies (16) y = a · e x p [ − x − b c 2 ] .

Techniques: